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| Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features * High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (-)25 (-)25 2SB632K, D612K (-)35 (-)35 (-)5 (-)2 (-)3 1 Unit V V V A A W W Tc=25C Tj Tstg 10 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ICBO IEBO IE=(-)10A, IC=0 VCB=(-)20V, IE=0 VEB=(-)4V, IC=0 Conditions B632, D612 B632K, D612K B632, D612 B632K, D612K Ratings min (-)25 (-)35 (-)25 (-)35 (-)5 (-)1 (-)1 typ max Unit V V V V V A A * : The 2SB632/2SD612 are classified by 500mA hFE as follows : 60 D 120 100 E 200 160 F 320 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341-1/9 2SB632, 632K/2SD612, 612K Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) ton tf tstg Conditions VCE=(-)2V, IC=(-)500mA VCE=(-)2V, IC=(-)1.5A VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)1.5A, IB=(-)0.15A IC=(-)1.5A, IB=(-)0.15A See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 60* 30 100 (45)30 (-0.4) 0.3 (-)1.1 (60)50 (80) 100 400 (-0.9) 0.8 (-)1.5 MHz pF V V V ns ns ns ns typ max 320* Unit Switching Time Test Circuit No.341-2/9 2SB632, 632K/2SD612, 612K No.341-3/9 2SB632, 632K/2SD612, 612K Sample Application Circuit 1 : 8W pure complementary amplifier using the 2SB632K/2SD612K [Specifications] Power supply : 100V AC supply transformer with no signal=28.8V. Maximum output=(THD=5%)=25V, f=1kHz, RL=8, Rg=600. Parameter Quiescent Current (Collector Current) Symbol ICCO ID IC Voltage Gain Output Power Total Harmonic Distortion Input Resistance Output Resistance VG VG PO THD ri ro Output stage Drive stage First stage Without NFB With NFB THD=5% PO=1W PO=1W PO=1W Conditions typ 14.0 42.0 1.4 75 40 8.7 0.05 60 0.2 Unit mA mA mA dB dB W % k No.341-4/9 2SB632, 632K/2SD612, 612K Unit (resistance : , capacitance : F) No.341-5/9 2SB632, 632K/2SD612, 612K No.341-6/9 2SB632, 632K/2SD612, 612K Sample Application Circuit 2 : 2SD612-Used 4W Input Transtformer coupling Amplifier for Car Use. [Specifications] VCC=13.2V, RL=4, Rg=600, f=1kHz. Parameter Quiescent Current (Collector Current) Voltage Gain Voltage Gain Output Power Total Harmonic Distortion Input Impedance Symbol ICCO ID VG VG PO THD ri Output stage Drive stage Without NFB With NFB THD=10% PO=0.5W PO=0.5W Conditions typ 12.0 9.0 66 49 4.7 0.8 60 Unit mA mA dB dB W % k Unit (resistance : , capacitance : F) No.341-7/9 2SB632, 632K/2SD612, 612K No.341-8/9 2SB632, 632K/2SD612, 612K Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice. PS No.341-9/9 |
Price & Availability of 2SD612K
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